By Edited by Pietro VINCENZINI World Academy of Ceramics and National Research Council, Italy Co-edited by Hua-Tay LIN, Oak Ridge National Laboratory, USA Kevin FOX, Savannah River National Laboratory, USA

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Extra info for 5th FORUM ON NEW MATERIALS PART B Proceedings of the 5th Forum on New Materials, part of CIMTEC 2010-12 th International Ceramics Congress and 5th Forum on New Materials Montecatini Terme, Italy, June 13-18, 2010

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After machining, the CLAM specimens (without coating) were mechanically polished with grinding papers up to 1500 grades. Finally, all the CLAM specimens with and without coating and SiCf/SiC composites specimens were cleaned in acetone and dried before performing the corrosion experiments. 2 Experiment apparatus The CLAM specimens without coating were tested in the stirred pot device [11] located in NIFS (National Institute of Fusion Study) at 500oC and 600oC, respectively. 17m/s in the test. The pot was assembled in the glove box and the crucible was made of 9Cr steel.

As for RS-SiCf/SiC composites, they suffered weight loss and some corrosion attack on the matrix and fiber. Pietro VINCENZINI, Hua-Tay LIN and Kevin FOX 49 4) Longer time corrosion experiments for the candidate materials with LiPb will be carried out to further evaluate the compatibility of them. Acknowledgements This work is supported by the National Natural Science Foundation of China with Grant Nos. 2009GB109000 and JSPS-China core-university program. The authors wish to thank for great help from all the FDS team members.

Helium may cause significant swelling in SiC due to its limited diffusivity and insolubility in SiC. The previous work indicated that He bubbles were formed by the synergistic effect of displacement damage, He and H atoms, and that the amount of implanted H changes the average size and number density of He bubbles [3]. In order to investigate the bubble formation 28 5th FORUM ON NEW MATERIALS PART B phenomenon of the Si-ion-interstitial effects, two groups of HNS SiCf/SiC composites were irradiated with different implantation energy.

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