By Karen J. Kirkby, Russell Gwilliam, Andy Smith, David Chivers
This is often the premiere global convention for the presentation of the most recent advances in ion implantation, from the basics of ion-solid interactions to production implant gear. All papers have been peer-reviewed. Ion implantation is used to fabricate semiconductor units. fabrics houses are replaced via bombarding wafers with atoms, that are speeded up in an ion implanter.
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Additional info for Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006 (AIP Conference Proceedings Accelerators, Beams, and Instrumentations)
H. A. W. El Mubarek, J. M. Bonar, G. D. Dilliway, P. Ashburn, M. Karunaratne, A. F. Willoughby, Y. Wang, P. L. F. Hemment, R. Price, J. Zhang, P. Ward, J. Appl. Phys. 96, 4114-4121 (2004). 17. M. N. Kham, H. A. W. El Mubarek, J. M. Bonar, P. Ashburn, Appl. Phys. Lett. 87, 011902 (2005). 15. M. Diebel, S. T. Dunham, Mater. Res. Soc. Symp. Proc. 6 (2002). 18. M. Y. Tsai, D. S. Day, B. G. Streetman, P. Williams, C. A. , J. Appl. Phys. 50, 188-192 (1979). 19. X. D. Pi, C. P. Burrows, P. G. Coleman, Phys.
Further evidence for the presence of EOR defects after 1 laser scan at 1150oC can be seen in figure 2c, where the samples have been post-annealed at 800°C for 60 seconds. Here, anomalous transient enhanced diffusion (TED) is observed in the low-concentration tail region of the profile. This effect is probably caused by a very high supersaturation of self interstitials, which could only be driven by the dissolution of EOR defects. An approximate estimate of the supersaturation can be obtained from the diffusion length in the tail region, which is of the order of 15 nm.
Kudo, S. Sakuragi, and K. Yamazaki, Mat. Res. Soc. Symp. Proc. Vol. 2E15/cm2) and double pulsed non-melt laser annealing. In this case, low sheet resistance of ~550 :/ was obtained. We also determined the threshold laser energy density between a non- melting and a melting state. 8Å. 86. jsp Impact of Fluorine co-implant on Boron Diffusion during Non-melt Laser Annealing T. Noda1,2, S. Felch3, V. Parihar3, C. Vrancken4, T. Janssens4, H. Bender4, B. Van Daele4, and W. , 2Matsushita assignee at IMEC, Kapeldreef 75, B-3001, Leuven, Belgium 3 Applied Materials, 974 E.